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Company Profile

Company Name Japan Fine Ceramics Co., LTD.
Location Sendai, Miyagi, JAPAN
Established April 5, 1984
Capital 300 Million Yen
Net Sales
(FY ended 3/30/2019)
8,800 Million Yen
Number of Employees 460

Japan Fine Ceramics Co., LTD.
Official Website

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Company Feature

Material

  • In-house material
    - Al2O3(99.9%, 99.5%), Zirconia
  • Outsourcing material
    - AlN(170/200/230W/m・K), Quartz, Black Alumina etc.

Technologies

  • High precise fine patterning (L/S=20µm/15µm)
  • Side Pattern
  • Thin film resistor
  • Step fabrication
  • Grooves
  • Via (Cu Filled, Through Via, Castellation)

Products

  • EML, PD, MPD Carrier
  • RF bridge/RF Launcher
  • Optical Bench/Board

Substrate Characteristic

Material Alumina
99.90%
Alumina
99.50%
Alumina
96%
AlN Alumina
(Black)
Bulk Density [g/cm3] 3.9 3.9 3.8 3.3 3.7
Flexural Strength [MPa] 660 440 300 330 320
Coefficient Liner Thermal Expansion [1/K] 25 ~ 800℃ 8×10-6 8×10-6 8×10-6 4.6×10-6 8.3×10-6
Thermal Conductivity [W/m・K] 25℃ 33 32 23 170/200/230 21
Young's Modulus [GPa] 390 380 340 330 -
Poisson's Ratio [-] 0.25 0.25 0.23 0.24 -
Dielectric Constant (25℃) [-] 1MHz - - - 8.8 8.5
10GHz 10 9.8 9.6 - -
Dielectric Loss angle (25℃) [-] 1MHz - - 2×10-4 5.0×10-4 3.5×10-4
10GHz 1×10-4 1×10-4 - - -
Volume Resistivity [Ω・cm] 1015 1015 1014 1012 1014
Surface Roughness (Ra) [μm] 0.02 0.02 0.3 0.05 0.3
Thickness [mm] 0.05 ~ 0.38 0.15 ~ 0.5 0.1 ~ 0.15 ~

Summary of Technical Features

We make submount according to your design.

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Eg) Optical Board/Bench Submount for 100G/400G

The material near the heat expansion coefficient of an optical component can be chosen.

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New Material

SiN Substrate = Under-development =

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  • Coefficient thermal expansion
    - 2.5 x 10-6/K (RT ~400℃)
  • Flexural strength (bending)
    - 700 MPa
  • Thermal Conductivity
    - 90 W/m・K
  • Fracture toughness
    - 6 MPa・m 1/2

Development Technologies

Patterning on stepped surface

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  • Advantage
    - Cost effective to eliminate jointing process
    - Enables monolithic design

Development Product

Cu Thick Submount for High Power Laser Applications= Under-development =

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  • Metallization configuration
    - Ti(0.07µm)/Pd(0.12µm)/Cu(75µm)/Ni(0.5µm)/Au(1.5µm MIN)

Characteristics of discrete semiconductor devices are often undermined due to the heat that is generated from inside module. To solve this, mounted substrates require heat dissipation, electric insulation and CTE which matches semiconductor chips.

High Dielectric Substrate/Single Layer Capacitor (under development)

High Dielectric Substrate/Single Layer Capacitor (under development)

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