Skip to main content

Hitachi High-Tech in Canada
  1. Home
  2. Products & Services
  3. Electron Microscopes / Atomic Force Microscopes
  4. Electron Microscopes (SEM/TEM/STEM)
  5. Nano-probing System
  6. Nanoscale Device Characteristics Analysis System Nano-Prober

Nanoscale Device Characteristics Analysis System Nano-Prober NP8000

Nanoscale Device Characteristics Analysis System Nano-Prober NP8000

The Hitachi NP8000 is a SEM-based dedicated probing system designed to meet the analytical needs of 5 nm nodes and beyond. The system is capable of evaluating electrical characteristics, EBAC, EBIC, pulse IV, and the temperature requirements of nanoscale devices.

Overview

  • New electron optics and new Schottky electron gun enable clear imaging using ultralow acceleration voltages of less than 100 V
  • Improvement of EBAC image quality with high probe current
  • 8 probe compatible
  • Temperature-controlled stage for temperature-dependent characterization
  • OM camera for both top-down and side views to assist coarse probing
  • Sub-stage to allow samples to move independently from probes
  • Probe exchange load-lock chamber
  • EBAC (Electron Beam Absorbed Current) imaging function
  • Improved voltage-applied EBAC function (dynamic-induced EBAC "DI-EBAC")
  • Pulsed IV measurement for diagnosing resistive gate electronode defects (custom order)
Probing on 5 nm device (Accelerating voltage: 0.2 kV)
Probing on 5 nm device (Accelerating voltage: 0.2 kV)
Schematic diagram
Schematic diagram
-

Features

-

Integrated GUI for probe-position control and SEM imaging
Simultaneous display (top and side) ensures accurate positioning

-

Simultaneous display of SEM and EBAC images
A method for faster defect detection

-

Low-resistance defects have historically been hard to image. The NP8000 is equiped with a new Schottky electron gun and improved voltage-applied EBAC amplifier that allows for easy imaging of these defects.

-

Improved imaging capability at low-accelerating voltages allows for lower accelerating voltages to be used which reduces specimen damage during observation.
Accelerating voltage: 100 V
Magnification: 80,000 (Live image)

Specifications

Probe unit Number of Probes 8
Stage Type Piezoelectric
Fine stroke range 5 µm (X,Y)
Coarse stroke range 3 mm (X), 5 mm (Y)
Specimen stage /
Base stage
Specimen size 15 mm x 15 mm or smaller (1 mm thick or less)
Travel Range Measurement / Specimen exchange / Probe exchange
Specimen /
probe exchange
Air-lock exchange chamber equipped
Probe navigation Stage traverse to probe position
Measurement position memory
Probe coarse adjustment
Probe coarse adjustment OM image display Top-down and side image displays
Electron optics Electron gun Schottky emission electron source
Accelerating voltage 0.1 kV to 30 kV
Image shift ±75 µm (at Vacc=1.0 kV, WD=5 mm)
EBAC amplifier /
Image display
Amplifier type Current amplifier / Differential amplifier/DI-EBAC amplifier
Image display SEM / EBAC (Single / Parallel / Overlay)
Image processing Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.

Related Information

Hitachi High-Tech Social Media

Contact Us