Ion beam etching machine
Applicable to etching of piezoelectric and magnetic materials for IoT and automotive devices from experiments to mass production.
Advanced diffused beam
Features
- Newly developed diffusion beam enables to etch for large areas with small diameter electrodes.
- 6 wafers(φ100mm) in a holder can be processed all together.
- Excellent in-plane uniformity with self-revolving wafer holder.
| Batch No. | Etching Rate(SiO2) (nm/min) | Uniformity(±%) |
|---|---|---|
| 1 | 21.4 | 2.2 |
| 2 | 21.5 | 2.1 |
| 3 | 21.6 | 2.2 |
Small Ion beam etching machine for R&D
Features
- A stand-alone machine specialized for experimental development.
- Compact design in one unit with electric components and power supplies
- Cooling the substrate, Neutralizing the electric potential of substrates , substrate rotation, stage tilting
-
Available up to φ 75, φ 100 and φ 125 mm wafers.
* Please contact us regarding the special work figure.
Single Wafer Ion Beam Etching machine
Features
-
Physical etching: Ar beam allows processing regardless of the reactivity of the material.
(Example)PZT, LN, LT, NiFe, Au, composite materials, multilayer films, etc.) - Processing temperature: The enhanced cooling mechanism suppresses the loss of piezoelectric properties of materials, changes in crystal structure, expansion, and changes of photoresist.
- Static charge control: The unique neutralization mechanism suppresses the charging of materials during processing.
- Selectivity: Stable and highly uniform etching. Just etching by the end point detector is possible.
- Processing shape: Adjust the taper angle by controlling the beam incident angle and beam divergence angle.
- In-plane distribution: Enhanced in-plane uniformity and in-plane inner/outer peripheral rate control.
- Machine specifications: A wide range of machine is available, from small diameter to large diameter.
Load Lock and Batch Ion Beam Etching machine
Features
-
Physical etching: Ar beam allows processing regardless of the reactivity of the material.
(Example)PZT, LN, LT, NiFe, Au, composite materials, multilayer films, etc.) - Processing temperature: The enhanced cooling mechanism suppresses the loss of piezoelectric properties of materials, changes in crystal structure, expansion, and changes of photoresist.
- Static charge control: The unique neutralization mechanism suppresses the charging of materials during processing.
- Selectivity: Stable and highly uniform etching. Just etching by the end point detector is possible.
- Processing shape: Adjust the taper angle by controlling the beam incident angle and beam divergence angle.
- In-plane distribution: Enhanced in-plane uniformity and in-plane inner/outer peripheral rate control.
- Machine specifications: A wide range of machine is available, from small diameter to large diameter.
