Transition Thermal Resistance Measuring Instrument
The transition thermal resistance measuring instrument is a device for measuring the transition thermal resistance of IGBT / MOS-FET / Diod / BJT.
(left picture) Photo of transition thermal resistance measuring instrument Model 2085
Special Features
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BJT (Bipolar Junction Transistor) transition thermal resistance measuring instrument
The equipment measures thermal resistance by determining the difference in voltage. This is done by passing a small current between the base emitter of the transistor, then measuring the base-emitter voltage at that time, then applying power across the collector-emitter, increasing the junction temperature, and after cutting off the power, a small current is again passed through between the base emitters, and the difference in the voltage is determined. -
IGBT (Insulated Gate Bipolar Transistor) transition thermal resistance measuring instrument
This is a measuring equipment that determines the difference in voltage between the gate and the emitter at the same time as the BJT transition thermal resistance measuring instrument . -
P-MOS FET transition thermal resistance measuring instrument
This is a measuring equipment that determines the difference in voltage between the gate and the source at the same time as the BJT transition thermal resistance measuring instrument. - The ΔVF of the diode can be measured.
Main specifications of the equipment
| Model No. | 2082B | 2083 | 2085 | 2086 |
|---|---|---|---|---|
| Measurement conditions | VCB 2～199V IE 0.1～29.9A IM 1～99mA Accuracy ±1% PW 1,2,5,10mS 20,50,100, 200mS 500, 1000mS |
VCB 2～599V IE 0.1～249.9A IM 1～199mA Accuracy ±1% PW 100,200, 500µS 1,2,5,10, 50mS 100,200, 500mS 1,2S |
VCB 2～599V IE 0.1～500.0A IM 1～199mA Accuracy ±1% PW 100,200, 500µS 1,2,5,10, 50mS 100,200, 500mS 1,2S |
VCB 2～99V IE 0.1～99.9A IM 1～199mA Accuracy ±1% PW 100,200, 500µS 1,2,5,10, 50mS 100,200, 500mS 1,2,5S,DC |
| Measuring range | ΔVBE 1～999mV VBE (max) 3V ΔVGS 10mV～9.99V VGS (max) 20V |
ΔVBE 1～1999mV VBE (max) 3V Accuracy ±1% |
ΔVBE 1～1999mV VBE (max) 3V Accuracy ±1% |
ΔVBE 1～999mV VBE (max) 3V Accuracy ±1% |
| Sampling points | Td 50～990µS | Td 50～990µS | Td 50～990µS | Td 50～990µS |
| Maximum bias conditions | ・At time PW 1mS VCB 199V IE 29.9A ・At time PW 1S VCB 20V IE 20.0A |
・At time 100µS VCB 599V IE 250A ・At time PW 2S VCB 20V IE 50A |
・At time 100µS VCB 599V IE 500A ・At time PW 2S VCB 20V IE 100A |
・At time 100µS VCB 99V IE 99.9A ・At time DC VCB 10V IE 50A |
| Polarity of the sample | Nch/Pch NPN/PNP |
NPN | NPN | NPN |
| Power source | AC100V ±10% 50/60Hz 1Φ |
AC100V ±10% 50/60Hz 1Φ |
AC100V ±10% 50/60Hz 1Φ |
AC200V ±10% 50/60Hz 1Φ |
| Outside dimensions[mm] | W670 D750 H1400 |
W820 D1350 H1700 |
W820 D1350 H1700 |
W670 D750 H1400 |
| Model No. | 2087 | 2185 | 2186 |
|---|---|---|---|
| Measurement conditions | VCB 2～1200V IE 0.1～999.9A IM 1～999mA Accuracy ±1% PW 0.1～99.9mS 1～999mS 0.01～9.99S 0.1～99.9S 1～999S |
VCE 5～99V IE 1～399A IM 1～99mA Accuracy ±1% PW 1,2,5, 10mS 20,50, 100,mS 200,500mS 1,2,5,10S |
VCE 10～1200V IE 0.1～99.9A IM 1～99mA Accuracy ±1% PW 100,200, 500µS 1,2,5,10, 50mS 100,200, 500mS 1,2S |
| Measuring range | ΔVBE 1～999mV VBE (max) 3V Accuracy ±1% |
ΔVGE 5～1999mV VGE (max) 20V Accuracy ±1% |
ΔVGE 10～999mV VGE (max) 20V Accuracy ±1% |
| Sampling points | Td 50～990µS | Td 50～990µS | Td 50～990µS |
| Maximum bias conditions | ・At time 100µS VCB 1200V IE 1000A ・At time PW 2S VCB 20V IE 200A |
・At time PW 1mS VCE 99V IE 399A ・At time PW 2S VCE 20V IE 100A |
・At time 100µS VCE 1200V IE 99.9A ・At time PW 2S VCE 20V IE 50A |
| Polarity of the sample | NPN | Nch NPN |
Nch NPN |
| Power source | AC100V ±10% 50/60Hz 1Φ |
AC200V ±5% 50/60Hz 1Φ |
AC200V ±5% 50/60Hz 1Φ |
| Outside dimensions[mm] | W1600 D2000 H1600 |
W1520 D2100 H1750 |
W800 D1600 H2000 |
